Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with a new"EL"series of high performance C-Band devices optimized for both high gain and power added efficiency. The"EL"high gain GaAs FETs are targeted for microwave radio s and solid-state power amplifiers (SSPAs) and will be exhibited in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium, May 25
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