New Higher Power 18W and 30W GaAs FETs Extend Toshiba Ku-Band Power Amplifier Lineup For Microwave Radios

Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of their Ku-Band gallium arsenide field effect transistor (GaAs FETs) lineup with two higher output power devices rated for 18 and 30 watts (W). The new power amplifier GaAs FETs will be shown in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium, which will be held May 25 through May 27 in Anaheim, California.

The new GaAs FETs, TIM1213-18L and TIM1213-30L, operate in the 12.7 to 13.2 GHz range, and are targeted for use in microwave radios for microwave links and satellite communications. Other current Toshiba GaAs FETs in this frequency range feature 2W, 4W, 8W, 10W and 15W power output ratings.

The TIM 1213-18L has output power at 1dB gain compression point (P1dB) of 42.5 dBm (typ.), power gain at 1dB gain compression point (G1dB) of 6.0dB (typ.) and power efficiency of 28 percent. The TIM 1213 - 30 L features P1dB of 45.0 dBm (typ.), G1dB of 5.5dB (typ.) and power added efficiency of 23 percent.

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Toshiba Adds 4 Watt C-BAND Microwave Power MMIC For RF-Microwave Pre-Amplifier Applications

Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., are adding a 4-watt (W) C-Band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) for satellite applications. Developed by Toshiba Corp. (Toshiba) the new MMIC, along with other new products, will be shown in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium, which will be held May 25 through May 27 in Anaheim, California.

The 4W MMIC, TMD0608-4, operates in the 5.65 to 8.50 GHz¹range. With this broad bandwidth, a high gain of 27dB throughout the operating range, and 50 ohm internal matching, the device is well suited for use as a pre-amplifier in C-Band satellite and terrestrial communications.

The TMD0608-4 has output power at 1dB gain compression point (P1dB) of 35.5 dBm (typ.), power gain at 1dB gain compression point (G1dB) of 27dB (typ.), and is housed in a hermetically sealed package.

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Toshiba Expands C-BAND GaAs FETs Lineup With Three Power Amplifiers Optimized For High Gain

Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with a new"EL"series of high performance C-Band devices optimized for both high gain and power added efficiency. The"EL"high gain GaAs FETs are targeted for microwave radio s and solid-state power amplifiers (SSPAs) and will be exhibited in TAEC's booth, # 813, at the 2010 IEEE MTT-S International Microwave Symposium, May 25

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Toshiba Launches 32-Bit Microcontroller For Analog Circuit Control In Industrial and Appliance Applications

Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, today announced availability of a new 32-bit microcontroller (MCU), the TMPM380. The TMPM380 MCU was specifically designed for the digital control of high-current circuits commonly found in industrial or appliance applications. Powered by a 40 MHz ARM® Cortex

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Toshiba Adds High Gain 50W GaN HEMT Power

Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the addition of a 50W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family. The new device will be shown at the 2010 IEEE MTT-S International Microwave Symposium, during the conference exhibition, May 25-27 in Anaheim, California.

The 50W TGI7785-50L is another commercial C-band GaN HEMT for satellite communication applications from Toshiba, joining a 120W C- band amplifier introduced last year, and other GaN Toshiba Ku-Band devices. The new device operates in the 7.7 GHz¹to 8.5 GHz range. RF performance specifications include output power of 47.0dBm (typ.) with 40dBm input power, linear gain of 11.0dB²(typ.) and drain current of 5.0 Amps²(typ.). This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for SATCOM applications.

"Our initial entry into C-Band GaN HEMTs was at the high end of the output power range, because microwave system designers have initially used GaAs devices for intermediate stage amplification to drive higher output GaN devices,"said Homayoun Ghani, business development manager, Microwave, RF and Small Signal Devices, in TAEC's Discrete Business Unit."This 50W GaN HEMT provides additional design flexibility by enabling use of higher performance GaN at a mid-amplification stage. It provides higher linear gain of 11dB compared to our conventional GaAs FETs with similar output power (45W and 60W), which have the gain of 6dB ( t yp.)³".

Toshiba's commercial GaN power amplifiers have been in volume production since 2008, starting with the Ku -band T G I 1414 -50 L power amplifier, which operates in the 14.0 GHz to 14.5 GHz range for satellite communication applications. GaN technology provides superior device performance such as high gain and efficiency in the SATCOM and RADAR markets. Toshiba is exploring new markets for this technology and will continue its efforts to develop a dditional GaN devices in C-, Ku and other bands with higher output power.

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First DC-DC Converter MOSFETs Using Toshiba Seventh Generation High Speed Process Achieve Lower Resistance And Gate Charge

Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, has launched its latest generation of power MOSFETs for synchronous DC-DC conversion. The seventh generation trench process in the Toshiba fast switching series, UMOS VII-H, enables a significant reduction in gate switch charge and on-state resistance (R_DS(ON)) resulting in greater power efficiency.

Developed by Toshiba Corp., the first two MOSFETs in the UMOS VII-H series, TPCA8055-H and TPC8055-H, are intended for use in high efficiency DC-DC converter applications in mobile and desktop computers, servers, video game consoles, and other electronic devices, in which they convert input voltage to the level required for various subsystems such as the processor, memory and input-output devices.

In internal testing, the UMOS-VII TPCA8055-H achieved 13 percent {1} lower R DS(ON) compared to our leading MOSFET from the previous UMOS VI-H generation. The new devices also feature fast switching, enabled through lower gate charge (Q_SW) and lower gate resistance (R_g).

The TPCA8055-H is offered in low-profile Toshiba SOP Advance surface mount packaging, which measures 5mm x 6mm x 0.95mm. The other device, TPC8055-H, is offered in industry standard SOP-8 packaging, which measures 5mm x 6mm x 1.6mm.

"These MOSFETs offer improved parameters compared to our previous generation devices, with high efficiency solutions for synchronous DC-DC conversion in a choice of packages,"said Jeff Lo, business development manager, Discrete Power Devices, for TAEC.

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Toshiba Introduces Double Data Rate Toggle Mode NAND In MLC And SLC Configurations

Toshiba America Electronic Components, Inc., (TAEC)* is introducing 32nm double data rate Toggle Mode NAND, in multi-level cell (MLC) versions with densities of 64Gb¹, 128Gb and 256Gb and single-level cell (SLC) versions with densities of 32Gb, 64Gb and 128Gb. Toggle Mode NAND features a faster interface than conventional or

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